DatasheetsPDF.com

HY51V18163HGT-7

Hynix Semiconductor
Part Number HY51V18163HGT-7
Manufacturer Hynix Semiconductor
Description 1M x 16Bit EDO DRAM
Published Apr 2, 2005
Detailed Description HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic R...
Datasheet PDF File HY51V18163HGT-7 PDF File

HY51V18163HGT-7
HY51V18163HGT-7

Overview
HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.
HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high speed access mode.
Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II.
The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
FEATURES • • • • • Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.
3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part No HY51V(S)18163HG/HGL-5 HY51V(S)18163HG/HGL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)