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HY51V65163HGJ-5

Hynix Semiconductor
Part Number HY51V65163HGJ-5
Manufacturer Hynix Semiconductor
Description 4M x 16Bit EDO DRAM
Published Apr 2, 2005
Detailed Description HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,30...
Datasheet PDF File HY51V65163HGJ-5 PDF File

HY51V65163HGJ-5
HY51V65163HGJ-5

Overview
HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs.
Extended data out mode is a kind of page mode which is useful for the read operation.
The advanced circuit and process allow this device to achieve high performance and low power dissipation.
Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh).
Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability FEATURES • • • • • Extended data out operation Read-modify-write capability Multi-bit parallel test capability LVTTL(3.
3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability • • • JEDEC standard pinout 50pin plastic SOJ/TSOP-II(400mil) Single power supply of 3.
3V +/- 10% Battery back up operat...


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