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HY628100A

Part Number	HY628100A
Manufacturer	Hynix Semiconductor
Description	128Kx8bit CMOS SRAM
Published	Apr 2, 2005
Detailed Description	HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random...
Datasheet	HY628100A PDF File

Overview

HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit.
The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology.
It is particulary well suited for used in high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.
0V.
Product Voltage Speed Operation No (V) (ns) Current(mA) HY628100A 5.
0 55/70/85 10 Comment : 50ns is available with 30pF test load.
FEATURES • Fully static operation and Tri-state output • TTL compatible inpu...

Similar Datasheet

HY628100A 128Kx8bit CMOS SRAM - Hynix Semiconductor
HY628100B 128K x8 bit 5.0V Low Power CMOS slow SRAM - Hynix Semiconductor

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