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HY62V8200BLLR1-I

Part Number	HY62V8200BLLR1-I
Manufacturer	Hynix Semiconductor
Description	HY62V8200B Series 256Kx8bit CMOS SRAM
Published	Apr 2, 2005
Detailed Description	HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revisi...
Datasheet	HY62V8200BLLR1-I PDF File

Overview

HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.
3V Low Power CMOS slow SRAM Revision History Revision No 03 History Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.
29.
2000 Remark Final 04 Sep.
04.
2000 Final 05 Dec.
04.
2000 Final 06 Apr.
30.
2001 Final This document is a general product description and is subject to change without notice.
Hynix Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 06 / Apr.
2001 Hynix Semiconductor Y62V8200B Series DESCRIPTION The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit.
The HY62V8200B uses high performance CMOS process technology and designed for high speed low power...

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