DatasheetsPDF.com

2SC4655

Panasonic Semiconductor
Part Number 2SC4655
Manufacturer Panasonic Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 s Features q q...
Datasheet PDF File 2SC4655 PDF File

2SC4655
2SC4655

Overview
Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.
6±0.
15 s Features q q 0.
4 0.
8±0.
1 0.
4 0.
2–0.
05 0.
15–0.
05 +0.
1 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios.
SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.
6±0.
1 1.
0±0.
1 0.
5 1 0.
5 3 2 0.
45±0.
1 0.
3 0.
75±0.
15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 5 30 125 125 –55 ~ +125 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : K s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE* fT Cre Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 1mA VCB = 10V, IE = –1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.
7MHz min 30 20 5 70 150 230 1.
3 250 MHz pF typ max Unit V V V *h FE Rank classification Rank hFE Marking Symbol B 70 ~ 160 KB C 110 ~ 250 KC 0 to 0.
1 s Absolute Maximum Ratings (Ta=25˚C) 0.
2±0.
1 +0.
1 1 Transistor PC — Ta 150 12 Ta=25˚C 125 10 IB=100µA 80µA 8 60µA 6 40µA 10 2SC4655 IC — VCE 12 VCE=10V Ta=25˚C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 100 Collector current IC (mA) 18 8 75 6 50 4 4 25 2 20µA 2 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 60 VCE=10V 50 100 30 10 3 1 0.
3 VCE(sat) — IC IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C 150 –25˚C 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)