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2SD1662

Toshiba Semiconductor
Part Number 2SD1662
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switchin...
Datasheet PDF File 2SD1662 PDF File

2SD1662
2SD1662

Overview
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm · High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 15 A) · Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 5 15 1 100 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit COLLECTOR BASE ≈ 2 kΩ ≈ 200 Ω EMITTER JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.
7 g (typ.
) 1 2003-02-04 2SD1662 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VECF fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 3 V, IC = 15 A IC = 15 A, IB = 0.
025 A IE = 10 A, IB = 0 VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Min Typ.
Max Unit ― ― 100 1000 ― ― ― ― ― ― ― ― ― ― ― ― 14 280 100 µA 10 mA ―V ― 1.
5 V 2.
2 V 3V ― MHz ― pF Turn-on time Switching time Storage time Fall time ton 20 µs Input IB1 Output ― 1 ― IB1 IB2 10 Ω tstg IB2 ― 2 ― µs VCC = 50 V tf ― 1.
5 ― IB1 = −IB2 = 0.
01 A, duty cycle ≤ 1% Marking TOSHIBA D1662 Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.
) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD1662 Collector current IC (A) Collector-emitter saturatio...


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