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2SD2088

Toshiba Semiconductor
Part Number 2SD2088
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2088 Micro Motor Drive, Hammer D...
Datasheet PDF File 2SD2088 PDF File

2SD2088
2SD2088

Overview
2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA) • Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.
5 A JEDEC TO-92MOD Collector power dissipation PC 0.
9 W JEITA ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-5J1A Weight: 0.
36 g (typ.
) Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD2088 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Unclamped inductive load energy Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ES/B VCB = 45 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 A(pulse) IC = 1 A, IB = 1 ...


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