DatasheetsPDF.com

2SD2115S

Hitachi Semiconductor
Part Number 2SD2115S
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S...
Datasheet PDF File 2SD2115S PDF File

2SD2115S
2SD2115S


Overview
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1.
Base 2.
Collector 3.
Emitter 4.
Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating 150 60 5 2 2.
5 18 150 –55 to +150 Unit V V V A A W °C °C 2SD2115(L)/(S) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 10 — 0.
8 1.
3 0.
6 V V µs Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.
5 A*1 I C = 1.
5 A, IB = 0.
05 A*1 I C = 1.
5 A, IB = 0.
05 A*1 I C = 1.
5 A, IB1 = –IB2 = 50 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1.
Pulse test.
V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3.
0 Area of Safe Operation iC(peak) IC(max) Collector current IC (A) s ) 1m 5°C s =2 0m (T C =1 tion PW era Op DC 1.
0 20 0.
3 10 0.
1 Ta = 25°C, 1 shot pulse 0.
03 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 Collector to emitter voltage VCE (V) 2 2SD2115(L)/(S) Typical Output Characteristics 1.
0 5 4.
5 1,000 4 3.
5 3 0.
6 2.
5 2 0.
4 1.
5 1 0.
2 0.
5 mA IB = 0 0 TC = 25°C DC current transfer ratio hFE 300 DC Current Transfer Ratio vs.
Collector Current Collector current IC (A) 0.
8 100 30 VCE = 5 V Ta = 25°C 2 4 6 8 10 Collector to emitter voltage VCE (V) 10 0.
03 0.
1 1.
0 0.
3 Collector current IC (A) 3.
0 Collector to emitter saturation voltage VCE(sat)...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)