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2SD2113

Part Number	2SD2113
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Col...
Datasheet	2SD2113 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 1.
5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.
5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector ...

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