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2SD2242A

Panasonic Semiconductor
Part Number 2SD2242A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: m...
Datasheet PDF File 2SD2242A PDF File

2SD2242A
2SD2242A

Overview
Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 5.
0±0.
1 10.
0±0.
2 1.
0 s Features 13.
0±0.
2 4.
2±0.
2 q q q 2.
5±0.
2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.
2±0.
1 C1.
0 2.
25±0.
2 18.
0±0.
5 Solder Dip Ratings 60 80 60 80 5 8 4 15 2 150 –55 to +150 Unit V 0.
35±0.
1 0.
65±0.
1 1.
05±0.
1 0.
55±0.
1 0.
55±0.
1 emitter voltage 2SD2242A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C C1.
0 1 2 3 2.
5±0.
2 2.
5±0.
2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2242 2SD2242A 2SD2242 2SD2242A 2SD2242 2SD2242A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.
5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V 20 0.
5 4 1 60 80 1000 2000 min typ E max 200 200 500 500 2 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 10000 2.
5 2 4 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 20 10 (1) TC=Ta (2) Without heat sink (PC=2.
0W) TC=25˚C IB=4.
0mA 2SD2242, 2SD2242A IC — VCE 10 VCE=3V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) Collec...


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