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DSF11060SG55

Dynex Semiconductor
Part Number DSF11060SG55
Manufacturer Dynex Semiconductor
Description Fast Recovery Diode
Published Apr 3, 2005
Detailed Description DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIO...
Datasheet PDF File DSF11060SG55 PDF File

DSF11060SG55
DSF11060SG55

Overview
DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.
4 DS4548 - 3.
2 January 2000 APPLICATIONS s Snubber Diode For GTO Circuits KEY PARAMETERS VRRM 6000V IF(AV) 400A IFSM 4200A Qr 700µC trr 6.
0µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 6000 5800 5600 5500 Conditions DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 VRSM = VRRM + 100V Lower voltage grades available.
Outline type code: M779b.
See Package Details for further information.
CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 400 631 585 A A A Parameter Conditions Max.
Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 265 420 365 A A A 1/6 DSF11060SG SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 57.
8 x 103 A2s 88 x 103 3.
4 A2s kA Conditions Max.
4.
2 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12kN with mounting compound Forward (conducting) Double side Single side -55 10.
8 0.
064 0.
008 0.
016 135 125 13.
2 o Min.
dc Anode dc - Max.
0.
032 0.
064 Units o C/W o C/W C/W C/W C/W o o Rth(c-h) Thermal resistance - case to heatsink o Tvj Tstg - Virtual junction temperature Storage temperature range Clamping force C C o kN CHARACTERISTICS Symbol VFM IRRM trr QRA1 IRM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) R...


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