DatasheetsPDF.com

DSF20060SF58

Dynex Semiconductor
Part Number DSF20060SF58
Manufacturer Dynex Semiconductor
Description Fast Recovery Diode
Published Apr 3, 2005
Detailed Description DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 APPLICATIONS...
Datasheet PDF File DSF20060SF58 PDF File

DSF20060SF58
DSF20060SF58

Overview
DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.
4 DS4219-4.
0 January 2000 APPLICATIONS s Inverters s Choppers s Inverse Parallel Diode s Freewheel Diode KEY PARAMETERS VRRM 6000V IF(AV) 780A IFSM 7800A Qr 1400µC trr 6.
5µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 6000 5800 5600 5500 Conditions DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 VRSM = VRRM + 100V Lower voltage grades available.
Outline type code: CB450.
See Package Details for further information.
CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 620 960 840 A A A Parameter Conditions Max.
Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 412 645 535 A A A 1/6 DSF20060SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 125oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 125oC I2t for fusing 205 x 103 A2s 300 x 103 6.
4 A2s kA Conditions Max.
7.
8 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.
5kN with mounting compound On-state (conducting) Double side Single side -55 18.
0 0.
050 0.
004 0.
008 125 150 22.
0 o Min.
dc Anode dc - Max.
0.
022 0.
039 Units o C/W o C/W C/W C/W C/W o o Rth(c-h) Thermal resistance - case to heatsink o Tvj Tstg - Virtual junction temperature Storage temperature range Clamping force C C o kN CHARACTERISTICS Symbol VFM IRRM trr QRA1 IRM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)