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DSF8025SE20

Dynex Semiconductor
Part Number DSF8025SE20
Manufacturer Dynex Semiconductor
Description Fast Recovery Diode
Published Apr 3, 2005
Detailed Description DSF8025SE DSF8025SE Fast Recovery Diode Advance Information Replaces March 1998 version, DS4146-4.4 DS4146-5.0 January ...
Datasheet PDF File DSF8025SE20 PDF File

DSF8025SE20
DSF8025SE20

Overview
DSF8025SE DSF8025SE Fast Recovery Diode Advance Information Replaces March 1998 version, DS4146-4.
4 DS4146-5.
0 January 2000 APPLICATIONS s Induction Heating s A.
C.
Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS KEY PARAMETERS VRRM 2500V IF(AV) 650A IFSM 7500A Qr 540µC trr 5.
0µs FEATURES s Double side cooling s High surge capability s Low recovery charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DSF8025SE25 2500 DSF8025SE24 2400 DSF8025SE23 2300 DSF8025SE22 2200 DSF8025SE21 2100 DSF8025SE20 2000 Lower voltage grades available.
VRSM = VRRM + 100V Outline type code: E See Package Details for further information.
CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 650 1020 785 A A A Parameter Conditions Max.
Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 385 604 465 A A A 1/8 DSF8025SE SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 180 x 103 A2s 281 x 103 6.
0 A2s kA Conditions Max.
7.
5 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 8.
0kN with mounting compound On-state (conducting) Double side Single side -55 7.
0 0.
094 0.
018 0.
036 150 175 9.
0 o Min.
dc Anode dc - Max.
0.
047 0.
094 Units o C/W o C/W C/W C/W C/W o o Rth(c-h) Thermal resistance - case to heatsink o Tvj Tstg - Virtual junction temperature Storage temperature range Clamping force C C o kN CHARACTERISTICS Symbol VFM IR...


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