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HYB25D256400BT

Part Number	HYB25D256400BT
Manufacturer	Infineon Technologies AG
Description	256-Mbit Double Data Rate SDRAM
Published	Apr 3, 2005
Detailed Description	HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev. B Data Sheet Jan. 2003, V1.1 Features CAS Late...
Datasheet	HYB25D256400BT PDF File

Overview

HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev.
B Data Sheet Jan.
2003, V1.
1 Features CAS Latency and Frequency CAS Latency 2 2.
5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is center-aligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst Lengths: 2, 4, or 8 • CAS Latency: (1.
5), 2, 2.
5, (3) • Auto Precharge option for each burst access • Auto Refresh and Self Refresh Modes • 7.
8ms Maximum Average Periodic Refresh Inter...

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