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74AC00

STMicroelectronics
Part Number 74AC00
Manufacturer STMicroelectronics
Description QUAD 2-INPUT NAND GATE
Published Apr 3, 2005
Detailed Description 74AC00 QUAD 2-INPUT NAND GATE s HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 4 µA (MAX.) a...
Datasheet PDF File 74AC00 PDF File

74AC00
74AC00

Overview
74AC00 QUAD 2-INPUT NAND GATE s HIGH SPEED: tPD = 4 ns (TYP.
) at VCC = 5V s LOW POWER DISSIPATION: ICC = 4 µA (MAX.
) at TA = 25 oC s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.
) s 50Ω TRANSMISSION LINE DRIVING CAPABILITY s SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24 mA (MIN) s BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL s OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V s PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 00 s IMPROVED LATCH-UP IMMUNITY DESCRIPTION The AC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal B (Plastic Package) M (Micro Package) ORDER CODES : 74AC00B 74AC00M wiring C2MOS technology.
It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS April 1997 1/7 74AC00 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y H H H L ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter Value Unit VCC Supply Voltage -0.
5 to +7 V VI DC Input Voltage -0.
5 to VCC + 0.
5 V VO DC Output Voltage -0.
5 to VCC + 0.
5 V IIK DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 50 mA ICC or IGND DC VCC or Ground Current ± 200 mA Tstg Storage Temperature -65 to +150 oC TL Lead Temperature (10 sec) 300 oC Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these condition is not implied.
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