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70511

Vishay Siliconix
Part Number 70511
Manufacturer Vishay Siliconix
Description N-Channel 75-V (D-S) 200C MOSFET
Published Apr 3, 2005
Detailed Description SPICE Device Model SUM110N08-05 Vishay Siliconix N-Channel 75-V (D-S) 200°C MOSFET CHARACTERISTICS • N-Channel Vertical...
Datasheet PDF File 70511 PDF File

70511
70511

Overview
SPICE Device Model SUM110N08-05 Vishay Siliconix N-Channel 75-V (D-S) 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 70511 09-Jun-04 www.
vishay.
com 1 SPICE Device Model SUM110N08-05 Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea VGS(th) ID(on) VDS = VGS, ID = 250 µA VDS > 5 V, VGS = 10 V VGS = 10 V, ID = 30 A rDS(on) VGS = 10 V, ID = 30 A, TJ = 125°C VGS = 10 V, ID = 30 A, TJ = 200°C Forward Transconductancea Forward Voltage a gfs VSD VDS = 15 V, ID = 30 A IS = 110 A, VGS = 0 V 3.
1 1197 0.
0038 0.
0063 0.
0084 109 0.
92 1 S V 0.
0038 Ω V A Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source ...


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