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KGL4215

Part Number	KGL4215
Manufacturer	OKI electronic componets
Description	10-Gbps Decision Circuit 0.2m Gate Length GaAs MESFET Technology
Published	Apr 4, 2005
Detailed Description	DATA SHEET O K I G a A s P R O D U C T S KGL4215 10-Gbps Decision Circuit 0.2µm Gate Length GaAs MESFET Technology Febr...
Datasheet	KGL4215 PDF File

Overview

DATA SHEET O K I G a A s P R O D U C T S KGL4215 10-Gbps Decision Circuit 0.
2µm Gate Length GaAs MESFET Technology February 2000 s s ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Oki Semiconductor KGL4215 10-Gbps GaAs Decision Circuit INTRODUCTION Oki Semiconductor’s KGL4215 is a 10-Gbps Decision Circuit with Limiting Amplifier and Flip Flop that is designed for ultra high-speed digital communications systems.
The KGL415 uses 0.
2-µm gate length GaAs MESFET and Oki’s unique MCFF ( Memory Cell type Flip Flop ) technology to achieve operating speeds of 10-Gbps or more.
The KGL4215 is available as a 24-pin ceramic packaged device.
Due to the KGL4215’s high sensitivity, capacitive coupling is recommended for the IC’s interface.
FEATURES • • • • • High-speed operation: 10-Gbps data rate (min) Low-power dissipation: 600 mW (typ.
) using 2-V power-supply 0.
2-µm gate length GaAs MESFET process MCFF ( Memory Cell type Flip Flop ) technology 24-pin ceramic package APPLICATION • High-speed optical communication systems: 10 Gbps • High-speed test equipment Oki Semiconductor 1 s KGL4215 s ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– BLOCK DIAGRAM VDD VDD DA 50 Ω DR1 DR2 D C C VDD CK 50 Ω CR QN D MCFF Q Q Q DA CK DR1, CR DR2 Q, QN VDD Data Input Terminal Clock Input Terminal Reference Voltage Terminals.
Usually D1R and DR are connected to ground through a capacitor (0.
1 µF).
Reference Voltage Bias Terminal Complimentary Data Output Terminals Power Supply of Internal Circuit ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Supply Voltage Data Input Voltage Temperature at Package Base under Bias Storage Temperature Symbol VDD VDI , VCI Ts Tst Min.
-0.
3 -0.
3 -45 -45 Max.
2.
3 1.
5 100 125 Units V V °C °C Exceeding these maximum ratings could cause immediate damage or lead to permanent deterioration of the device.
Electrical Characteristics VDD = 2 V ± 0.
1 V, Ts = 0°C to 70°C ...

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