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KM416V254D

Samsung semiconductor
Part Number KM416V254D
Manufacturer Samsung semiconductor
Description 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
Published Apr 4, 2005
Detailed Description KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of ...
Datasheet PDF File KM416V254D PDF File

KM416V254D
KM416V254D

Overview
KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Power supply voltage(+5.
0V or +3.
3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RASonly refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 256Kx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high...


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