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KM416V4004B

Part Number	KM416V4004B
Manufacturer	Samsung semiconductor
Description	4M x 16bit CMOS Dynamic RAM with Extended Data Out
Published	Apr 4, 2005
Detailed Description	KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of ...
Datasheet	KM416V4004B PDF File

Overview

KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumptio...

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