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KSB596

Fairchild Semiconductor
Part Number KSB596
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxi...
Datasheet PDF File KSB596 PDF File

KSB596
KSB596

Overview
KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 2.
Collector 3.
Emitter 1.
Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.
4 30 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = - 50mA, IB = 0 IE = - 10mA, IC = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 0.
5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.
3A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 0.
5A VCB = - 10V, IE = 0 f = 1MHz 3 130 40 15 -1 -1 Min.
- 80 -5 - 70 - 100 240 - 1.
7 - 1.
5 V V MHz pF Typ.
Max.
Units V V µA µA hFE Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev.
A, February 2000 KSB596 Typical Characteristics -4.
0 IB = -140mA IB = -160mA -1 IB = 20m A 1000 0m IB = -10 A VCE = -5V Ic[A], COLLECTOR CURRENT -3.
2 IB = -180mA IB = -80mA hFE, DC CURRENT GAIN IB = -60mA -2.
4 100 IB = -40mA -1.
6 IB = -20mA 10 -0.
8 IB = 0mA 0 -1 -2 -3 -4 -5 1 -0.
001 -0.
01 -0.
1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain -4 -10 -3 VCE(sat)[V], SATURATION VOLTAGE VCE = -5V IC = 10 IB IC[A], COLLECTOR CURRENT -1 -2 -0.
1 -1 0 -0.
4 -0.
8 -1.
2 -1.
6 -0.
01 -0.
001 -0.
01 -0.
1 -1 -10 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURR...


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