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KSC1009

Fairchild Semiconductor
Part Number KSC1009
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA C...
Datasheet PDF File KSC1009 PDF File

KSC1009
KSC1009

Overview
KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector (1.
Emitter 2.
Collector 3.
Base) 1 TO-92 1.
Emitter 2.
Base 3.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 160 140 8 700 800 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=200mA, IB=20mA IC=200mA, IB=20mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz 30 40 0.
2 0.
86 50 8 Min.
160 140 8 0.
1 0.
1 400 0.
7 1.
0 V V MHz pF Typ.
Max.
Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev.
A1, June 2001 KSC1009 Typical Characteristics 100 90 IB=0.
8mA IB=0.
6mA IB=0.
4mA 1000 VCE = 5V IC[mA], COLLECTOR CURRENT 80 70 60 50 40 30 hFE, DC CURRENT GAIN 10 100 10 IB=0.
2mA 20 10 0 0 2 4 6 8 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC=10IB VCE=2V V BE(sat) 1 IC[mA], COLLECTOR CURRENT 100 1000 100 VCE(sat) 0.
1 10 0.
01 1 10 1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
...


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