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KSC1623GMTF

Fairchild Semiconductor
Part Number KSC1623GMTF
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. • Complement to KSA812 2 1 3 SOT-23 1. Base 2. Emitter...
Datasheet PDF File KSC1623GMTF PDF File

KSC1623GMTF
KSC1623GMTF

Overview
KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC.
• Complement to KSA812 2 1 3 SOT-23 1.
Base 2.
Emitter 3.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 60 50 5 100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 0.
55 90 200 0.
15 0.
86 0.
62 250 3 Min.
Typ.
Max.
0.
1 0.
1 600 0.
3 1.
0 0.
65 V V V MHz pF Units µA µA hFE Classification Classification hFE O 90 ~ 180 Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 Marking C1 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev.
A2, September 2002 KSC1623 Typical Characteristics 100 90 100 VCE = 6V IB = 400µA IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA 80 70 60 50 40 30 20 10 0 0 4 8 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 350µA 10 1 12 16 20 0.
1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V],BASE-EMITTER VOLTAGE Figure 1.
Static Charactersitic Figure 2.
Transfer Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 6V IC=10IB hFE, DC CURRENT GAIN 1000 1000 VBE(sat) 100 VCE(sat) 10 1 10 100 1000 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3.
DC current Gain Figure 4.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 IE...


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