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KSC1845

Fairchild Semiconductor
Part Number KSC1845
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC1845 KSC1845 Audio Frequency Low Noise Amplifier • Complement to KSA992 1 TO-92 1. Emitter 2. Collector 3. Base ...
Datasheet PDF File KSC1845 PDF File

KSC1845
KSC1845

Overview
KSC1845 KSC1845 Audio Frequency Low Noise Amplifier • Complement to KSA992 1 TO-92 1.
Emitter 2.
Collector 3.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 500 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VBE (sat) fT Cob NL Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Level Test Condition VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=0.
1mA VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.
55 580 600 0.
59 0.
07 110 1.
6 25 2.
5 40 Min.
Typ.
Max.
50 50 1200 0.
65 0.
3 V V MHz pF mV Units nA nA hFE Classification Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 U 600 ~ 1200 ©2002 Fairchild Semiconductor Corporation Rev.
B2, November 2002 KSC1845 Typical Characteristics 10 IB=16µA IB=14µA 1.
0 IB=1.
4µA IB=1.
2µA IB=1.
0µA IB=0.
8µA IB=0.
6µA IC[mA], COLLECTOR CURRENT 8 IB=12µA IB=10µA IB=8µA 4 6 IC[mA], COLLECTOR CURRENT 0.
8 0.
6 IB=6µA IB=4µA 0.
4 IB=0.
4µA 2 IB=2µA 0.
2 IB=0.
2µA 0 0 1 2 3 4 5 0.
0 0 20 40 60 80 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1.
Static Characteristic Figure 2.
Static Characteristic 1000 900 800 VCE = 6V Pule Test VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 IC=10IB Pulse Test 10 hFE, DC CURRENT GAIN 700 600 500 400 300 200 100 0 0.
01 1 VBE(sat) 0.
1 VCE(sat) 0.
1 1 10 100 0.
01 0.
1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3.
DC current Gain Figure 4.
Base-Emitter Saturation ...


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