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KSC5302DM

Fairchild Semiconductor
Part Number KSC5302DM
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application High breakdown Voltage :BVCBO=800V Built-in Free...
Datasheet PDF File KSC5302DM PDF File

KSC5302DM
KSC5302DM

Overview
KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product • Low base drive requirement • • • • B Equivalent Circuit C 1 E TO-126 2.
Collector 3.
Base 1.
Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse...


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