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KSC5402D

Fairchild Semiconductor
Part Number KSC5402D
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC5402D/KSC5402DT KSC5402D/KSC5402DT High Voltage High Speed Power Switch Application • • • • • Wide Safe Operating Ar...
Datasheet PDF File KSC5402D PDF File

KSC5402D
KSC5402D


Overview
KSC5402D/KSC5402DT KSC5402D/KSC5402DT High Voltage High Speed Power Switch Application • • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 B D-PAK Equivalent Circuit C 1 TO-220 E 1 1.
Base 2.
Collector 3.
Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) : D-PAK * : TO-220 Junction Temperature Storage Temperature Value 1000 450 12 2 5 1 2 30 50 150 - 65 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purpose ; 1/8” from Case for 5 Seconds Rating TO-220 2.
5 62.
5 270 D-PAK 4.
17 * 50 270 °C Unit °C/W * Mounted on 1” square PCB (FR4 ro G-10 Material) ©2002 Fairchild Semiconductor Corporation Rev.
B2, December 2002 KSC5402D/KSC5402DT Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCES=1000V, IEB=0 VCE=450V, VB=0 VEB=10V, IC=0 VCE=1V, IC=0.
4A VCE=1V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC=0.
4, IB=0.
04A IC=1A, IB=0.
2A VBE(sat) Base-Emitter Saturation Voltage IC=0.
4A, IB=0.
04A IC=1A, IB=0.
2A Cib Cob fT VF Input Capacitance Output Capacitance Current Gain Bandwidth Product Diode Forward Voltage TC=25°C...



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