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KSD1021

Fairchild Semiconductor
Part Number KSD1021
Manufacturer Fairchild Semiconductor
Description Audio Frequency Power Amplifier
Published Apr 5, 2005
Detailed Description KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipat...
Datasheet PDF File KSD1021 PDF File

KSD1021
KSD1021

Overview
KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW 1 TO-92S 1.
Emitter 2.
Collector 3.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 30 5 1 350 150 -55 ~ 150 Units V V V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.
1A IC=1A, IB=0.
1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 130 16 70 Min.
40 30 5 0.
1 400 0.
5 1.
2 V V MHz pF Typ.
Max.
Units V V V µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev.
A1, June 2001 KSD1021 Typical Characteristics 1.
0 0.
9 1000 VCE = 1V IB = 5.
0mA IB = 4.
5mA IB = 4.
0mA IB = 3.
5mA IB = 3.
0mA IC[A], COLLECTOR CURRENT 0.
8 0.
7 0.
6 hFE, DC CURRENT GAIN 9 10 100 IB = 2.
5mA 0.
5 IB = 2.
0mA 0.
4 IB = 1.
5mA 0.
3 0.
2 10 IB = 1.
0mA IB = 0.
5mA 0.
1 0.
0 0 1 2 3 4 5 6 7 8 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 f=1MHz IE=0 1 V BE(sat) Cob[pF], CAPACITANCE 10 100 1000 10 0.
1 V CE(sat) 0.
01 1 1 1 10 100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3.
Base-Emitter Saturation Voltage Collector-Emitter Saturat...


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