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KSD261

Fairchild Semiconductor
Part Number KSD261
Manufacturer Fairchild Semiconductor
Description Low Frequency Power Amplifier
Published Apr 5, 2005
Detailed Description KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-...
Datasheet PDF File KSD261 PDF File

KSD261
KSD261

Overview
KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1.
Emitter 2.
Collector 3.
Base) 1 TO-92 1.
Emitter 2.
Base 3.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 500 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.
1A IC=0.
5A, IB=50mA 40 0.
18 Min.
40 20 5 0.
1 0.
1 400 0.
4 V Typ.
Max.
Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev.
A2, November 2002 KSD261 Typical Characteristics 500 450 1000 IB = 2.
0mA IB = 1.
8mA VCE = 1V IC[mA], COLLECTOR CURRENT 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 IB = 1.
4mA IB = 1.
2mA IB = 1.
0mA IB = 0.
8mA IB = 0.
6mA IB = 0.
4mA IB = 0.
2mA hFE, DC CURRENT GAIN IB = 1.
6mA 100 10 6 7 8 9 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 IC = 10 IB VCE = 1V 1 V BE(sat) IC[mA], COLLECTOR CURRENT 100 1000 10 0.
1 1 VCE(sat) 0.
01 1 10 0.
1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4...


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