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KSH44H11

Fairchild Semiconductor
Part Number KSH44H11
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSH44H11 KSH44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface...
Datasheet PDF File KSH44H11 PDF File

KSH44H11
KSH44H11

Overview
KSH44H11 KSH44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular KSE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1 D-PAK 1.
Base 1 I-PAK 3.
Emitter 2.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 80 5 8 16 20 1.
75 150 - 65 ~ 150 Units V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO IEBO hFE VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time Test Condition IC = 30mA, IB = 0 VCE = 80V, IB = 0 VBE = 5V, IC = 0 VCE = 1V, IC = 2A VCE = 1V, IC = 4A IC = 8A, IB = 0.
4A IC = 8A, IB = 0.
8A VCE = 10V, IC = 0.
5A VCB =10V, f = 1MHz IC = 5A IB1 = - IB2 = 0.
5A 50 130 300 500 140 60 40 1 1.
5 V V MHz pF ns ns ns Min.
80 Typ.
Max.
10 50 Units V µA µA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev.
A3, October 2002 KSH44H11 Typical Characteristics 1000 100 VCE = 1V IC[A], COLLECTOR CURRENT ICP(max) 10 10 hFE, DC CURRENT GAIN 100 IC(max) DC 50 0µ 5m s 1m s 0µ s s 1 10 0.
1 1 0.
01 0.
01 0.
1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1.
DC current Gain Figure 2.
Safe Operating Area 25 PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 o 75 100 125 150 175 ...


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