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KSR1103

Fairchild Semiconductor
Part Number KSR1103
Manufacturer Fairchild Semiconductor
Description Switching Application
Published Apr 5, 2005
Detailed Description KSR1103 KSR1103 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver...
Datasheet PDF File KSR1103 PDF File

KSR1103
KSR1103

Overview
KSR1103 KSR1103 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =22KΩ, R2=22KΩ) • Complement to KSR2103 3 2 1 SOT-23 1.
Base 2.
Emitter 3.
Collector Equivalent Circuit C Marking R1 B R2 R0 3 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature E Value 50 50 10 100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.
5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.
0MHz VCE=5V, IC=100µA VCE=0.
3V, IC=5mA 15 0.
9 22 1 0.
5 3.
0 29 1.
1 250 3.
7 56 0.
3 V MHz pF V V KΩ Min.
50 50 0.
1 Typ.
Max.
Units V V µA ©2002 Fairchild Semiconductor Corporation Rev.
A2, October 2002 KSR1103 Typical Characteristics 1000 100 VCE = 5V R1 = 22K R2 = 22K VCE = 0.
3V R1 = 22 K R2 = 22 K VI(on)[V], INPUT VOLTAGE 1 10 100 1000 hFE, DC CURRENT GAIN 10 100 1 10 0.
1 0.
1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Input On Voltage 280 IC [µA], COLLECTOR CURRENT 1000 PC[mW], POWER DISSIPATION VCE = 5V R1 = 22K R2 = 22K 240 200 160 100 120 80 40 10 0.
0 0 0.
4 0.
8 1.
2 1.
6 2.
0 2.
4 0 25 50 o 75 100 125 150 175 VI(OFF)[V], INPUT OFF VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 3.
Input Off Voltage Figure 4.
Power Derating ©...


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