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ISL9N303AS3

Fairchild Semiconductor
Part Number ISL9N303AS3
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 3.2m
Published Apr 5, 2005
Detailed Description ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Ch...
Datasheet PDF File ISL9N303AS3 PDF File

ISL9N303AS3
ISL9N303AS3

Overview
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 3.
2mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
0026Ω (Typ), VGS = 10V • rDS(ON) = 0.
004Ω (Typ), VGS = 4.
5V • Qg (Typ) = 61nC, VGS = 5V • Qgd (Typ) = 17nC • CISS (Typ) = 7000pF Applications • DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE G DRAIN (FLANGE) D TO-220AB TO-263AB TO-262AB S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID C...


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