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ISL9N304AS3ST

Part Number	ISL9N304AS3ST
Manufacturer	Fairchild Semiconductor
Description	N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
Published	Apr 5, 2005
Detailed Description	ISL9N304AP3/ISL9N304AS3ST February 2002 PWM Optimized ISL9N304AP3/ISL9N304AS3ST N-Channel Logic Level UltraFET® Trenc...
Datasheet	ISL9N304AS3ST PDF File

Overview

ISL9N304AP3/ISL9N304AS3ST February 2002 PWM Optimized ISL9N304AP3/ISL9N304AS3ST N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 4.
5mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
0036Ω (Typ), VGS = 10V • rDS(ON) = 0.
0060Ω (Typ), VGS = 4.
5V • Qg (Typ) = 38nC, VGS = 5V • Qgd (Typ) = 13nC • CISS (Typ) = 4075pF Applications • DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE SOURCE DRAIN (FLANGE) G S TO-263 Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.
5V) TO-220 Ratings 30 ±20 75 74 20 Figure 4 145 0.
97 -55 to 175 Units V V A A A A W W/oC o MOSFET Maximum Ratings...

Similar Datasheet

ISL9N304AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m - Fairchild Semiconductor

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