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ISL9N306AD3

Fairchild Semiconductor
Part Number ISL9N306AD3
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m
Published Apr 5, 2005
Detailed Description ISL9N306AD3 / ISL9N306AD3ST June 2003 ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench...
Datasheet PDF File ISL9N306AD3 PDF File

ISL9N306AD3
ISL9N306AD3

Overview
ISL9N306AD3 / ISL9N306AD3ST June 2003 ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
0052Ω (Typ), V GS = 10V • rDS(ON) = 0.
0085Ω (Typ), V GS = 4.
5V • Qg (Typ) = 30nC, VGS = 5V • Qgd (Typ) = 11nC • CISS (Typ) = 3400pF SOURCE DRAIN DRAIN (FLANGE) GATE G S Applications • DC/DC converters DRAIN...


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