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ISL9N308AS3ST

Part Number	ISL9N308AS3ST
Manufacturer	Fairchild Semiconductor
Description	N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 8m
Published	Apr 5, 2005
Detailed Description	ISL9N308AP3/ISL9N308AS3ST January 2002 PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET® Trench...
Datasheet	ISL9N308AS3ST PDF File

Overview

ISL9N308AP3/ISL9N308AS3ST January 2002 PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 8mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
0064Ω (Typ), VGS = 10V • rDS(ON) = 0.
010Ω (Typ), VGS = 4.
5V • Qg (Typ) = 24nC, VGS = 5V • Qgd (Typ) = 8nC • CISS (Typ) = 2600pF Applications • DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE SOURCE G DRAIN (FLANGE) S TO-263AB TO-220AB MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.
5V) Continuous (TC = 25oC, VGS = 10V, RθJC = 43oC/W) Pul...

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ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 8m - Fairchild Semiconductor

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