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ISL9N312AS3ST

Part Number	ISL9N312AS3ST
Manufacturer	Fairchild Semiconductor
Description	N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Published	Apr 5, 2005
Detailed Description	ISL9N312AP3/ISL9N312AS3ST January 2002 ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench ...
Datasheet	ISL9N312AS3ST PDF File

Overview

ISL9N312AP3/ISL9N312AS3ST January 2002 ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
010Ω (Typ), VGS = 10V • rDS(ON) = 0.
017Ω (Typ), VGS = 4.
5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
5nC • CISS (Typ) = 1450pF Applications • DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE SOURCE G DRAIN (F...

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ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs - Fairchild Semiconductor

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