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IXBF9N160

IXYS Corporation
Part Number IXBF9N160
Manufacturer IXYS Corporation
Description High Voltage BIMOSFET
Published Apr 5, 2005
Detailed Description Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transist...
Datasheet PDF File IXBF9N160 PDF File

IXBF9N160
IXBF9N160

Overview
Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160 VCES VCE(sat) tf = = = = 7A 1400/1600 V 4.
9V 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0.
8VCES 70 V V V A A A W Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high volt...


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