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IXBH9N140G

IXYS Corporation
Part Number IXBH9N140G
Manufacturer IXYS Corporation
Description High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Published Apr 5, 2005
Detailed Description High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXB...
Datasheet PDF File IXBH9N140G PDF File

IXBH9N140G
IXBH9N140G

Overview
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.
9 V typ.
70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms VGE = 10 V, TVJ = 125°C, RG = 27 Ω VCE = 0.
8•VCES Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 9N140G 9N160G 1400 1400 1600 1600 ±...


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