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IXDH20N120D1

IXYS Corporation
Part Number IXDH20N120D1
Manufacturer IXYS Corporation
Description High Voltage IGBT
Published Apr 5, 2005
Detailed Description High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 20N120 VCES = 1200 V = 38 A IXDH 2...
Datasheet PDF File IXDH20N120D1 PDF File

IXDH20N120D1
IXDH20N120D1

Overview
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.
4 V C G G C TO-247 AD G C E IXDH 20N120 E IXDH 20N120 D1 E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 82 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 82 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 38 25 50 ICM = 35 VCEK < VCES 10 20...


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