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IXFH15N80

IXYS Corporation
Part Number IXFH15N80
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 ...
Datasheet PDF File IXFH15N80 PDF File

IXFH15N80
IXFH15N80

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.
70 W 0.
60 W 800 V 14 A 800 V 15 A trr £ 250 ns Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 14N80 15N80 14N80 15N80 14N80 15N80 14 15 56 60 14 15 30 5 V V V V A A A A A A mJ V/ns TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain Features 300 -55 .
.
.
+150 150 -55 .
.
.
+150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier • • • • PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
062 in.
) from...


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