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IXFH26N50Q

IXYS Corporation
Part Number IXFH26N50Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q I...
Datasheet PDF File IXFH26N50Q PDF File

IXFH26N50Q
IXFH26N50Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on) 0.
23 Ω 0.
20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 24N50 26N50 24N50 26N50 24N50 26N50 Maximum Ratings 500 500 ± 20 ± 30 24 26 96 104 24 26 30 1.
5 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A A A mJ J V/ns W °C °C °C °C Nm/lb.
in.
g g TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features l l l l 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.
13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) ...


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