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IXFK100N10

IXYS Corporation
Part Number IXFK100N10
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID...
Datasheet PDF File IXFK100N10 PDF File

IXFK100N10
IXFK100N10

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings IXFK IXFN 100 100 ±20 ±30 100  76 560 75 30 5 500 100 100 ±20 ±30 150 560 75 30 5 520 150 -55 .
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+150 V V V V A A A A mJ V/ns W °C °C °C °C V~ V~ G S S S D D G G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 .
.
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+150 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 300 ...


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