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IXFN340N06

IXYS Corporation
Part Number IXFN340N06
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs Single Die MOSFET
Published Apr 5, 2005
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, H...
Datasheet PDF File IXFN340N06 PDF File

IXFN340N06
IXFN340N06

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFN 340N06 VDSS = 60 V ID25 = 340 A 3 mW RDS(on) = trr £ 250 ns D G S S Maximum Ratings 60 60 ± 20 ± 30 340 100 1360 200 64 4 5 700 -55 .
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