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IXFX34N80

IXYS Corporation
Part Number IXFX34N80
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR...
Datasheet PDF File IXFX34N80 PDF File

IXFX34N80
IXFX34N80

Overview
HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 34N80 IXFX 34N80 VDSS ID25 RDS(on) = 800 V = 34 A = 0.
24 W trr £ 250 ns Maximum Ratings 800 800 ±20 ±30 34 136 36 64 3 5 560 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 0.
9/6 Nm/lb.
in.
6 10 g g Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance ...


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