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IXFX44N50F

ETC
Part Number IXFX44N50F
Manufacturer ETC
Description N-Channel Power MOSFET
Published Apr 5, 2005
Detailed Description HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Q...
Datasheet PDF File IXFX44N50F PDF File

IXFX44N50F
IXFX44N50F

Overview
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 44N50F IXFK 44N50F VDSS = 500 V ID25 = 44 A RDS(on) = 120 mΩ trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 44 184 44 60 2.
5 10 500 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate S = Source (TAB) D G TO-264 AA (IXFK) G D S (TAB) D = Drain TAB = Drain 0.
4/6 Nm/lb.
in.
6 10 g g Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switc...


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