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IXFX73N30Q

IXYS Corporation
Part Number IXFX73N30Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs Q-CLASS
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t...
Datasheet PDF File IXFX73N30Q PDF File

IXFX73N30Q
IXFX73N30Q

Overview
HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque (TO-264) PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFX 73N30Q IXFK 73N30Q VDSS = 300 V ID25 = 73 A RDS(on) = 42 mΩ trr ≤ 250 µs PLUS 247TM (IXFX) Maximum Ratings 300 300 ± 20 ± 30 73 292 73 60 2.
5 5 500 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding e...


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