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IXFX90N30

IXYS Corporation
Part Number IXFX90N30
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 5, 2005
Detailed Description HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ...
Datasheet PDF File IXFX90N30 PDF File

IXFX90N30
IXFX90N30

Overview
HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 300 300 ± 20 ± 30 90 75 360 90 64 3 5 560 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.
in.
6 10 g g PLUS 247TM G (TAB) D TO-264 AA (IXFK) G TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C D (TAB) S G = Gate S = Source D = Drain TAB = Drain 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 0.
4/6 300 Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UI...


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