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IXGH25N100AU1

IXYS Corporation
Part Number IXGH25N100AU1
Manufacturer IXYS Corporation
Description High speed IGBT with Diode
Published Apr 5, 2005
Detailed Description Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A...
Datasheet PDF File IXGH25N100AU1 PDF File

IXGH25N100AU1
IXGH25N100AU1

Overview
Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.
5 V 4.
0 V TO-247 AD (IXGH) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.
8 VCES 200 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C Features International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E C = Collector TAB = Collector G = Gate E = Emitter Mounting torque (M3) 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO...


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