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IXGT32N60BD1

IXYS Corporation
Part Number IXGT32N60BD1
Manufacturer IXYS Corporation
Description HiPerFAST IGBTwith Diode
Published Apr 5, 2005
Detailed Description HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns S...
Datasheet PDF File IXGT32N60BD1 PDF File

IXGT32N60BD1
IXGT32N60BD1

Overview
HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.
3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.
8 VCES 200 -55 .
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+150 150 -55 .
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+150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter, Features • International standard packages • • • • ...


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