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IXSH24N60AU1

IXYS Corporation
Part Number IXSH24N60AU1
Manufacturer IXYS Corporation
Description HiPerFASTTM IGBT with Diode
Published Apr 5, 2005
Detailed Description HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 4...
Datasheet PDF File IXSH24N60AU1 PDF File

IXSH24N60AU1
IXSH24N60AU1


Overview
HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 48 A 2.
2 V 48 A 2.
7 V Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM T stg Test Conditions T J = 25 ° C to 150 ° C600 T J = 25 ° C to 150 ° C; R GE = 1 M W Continuous Transient TC = 25 ° C TC = 90 ° C TC = 25 ° C, 1 ms V GE= 15 V, T VJ = 125 ° C, R G = 10 W Clamped inductive load, L = 100 m H V GE= 15 V, V CE = 360 V, T J = 125 ° C, R G = 82 W , non-repetitive TC = 25 ° C Maximum Ratings V 600 ± 20 ± 30 48 24 96 I CM = 48 @ 0.
8 V CES 10 150 -55 .
.
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+150 150 -55 .
.
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+150 300 260 TO-247 AD V V V A A A A Features ms W °C °C °C °C °C • International standard package JEDEC TO-247 AD • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM ...



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