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IXTC26N50P

IXYS Corporation
Part Number IXTC26N50P
Manufacturer IXYS Corporation
Description PolarHV Power MOSFET
Published Apr 5, 2005
Detailed Description Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche ...
Datasheet PDF File IXTC26N50P PDF File

IXTC26N50P
IXTC26N50P

Overview
Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 13 78 26 40 1.
0 10 100 -55 .
.
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+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g Features z Silicon chip on Direct-Copper-Bond substrate -...


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