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IXTK21N100

IXYS Corporation
Part Number IXTK21N100
Manufacturer IXYS Corporation
Description Power MOSFET
Published Apr 5, 2005
Detailed Description High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement ...
Datasheet PDF File IXTK21N100 PDF File

IXTK21N100
IXTK21N100

Overview
High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.
55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.
9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXTK IXTN 1000 1000 ±20 ±30 21 84 500 1000 1000 ±20 ±30 21 84 520 150 -55 .
.
.
+150 2500 3000 V V V V A A W °C °C °C °C V~ V~ S S D G S G D S D (TAB) miniBLOC, SOT-227 B E153432 D G S -55 .
.
.
+150 G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Mounting torque Terminal connection torque 1.
5/13 Nm/lb.
in.
1.
5/13 Nm/lb.
in.
30 g Features l l l l l l International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classificati...


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